 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 85 ? imp, inc. process C3013 cmos 3 m m 10 volt single metal analog electrical characteristics t=25 o c unless otherwise noted iso 9001 registered n-channel transistor symbol minimum typical maximum unit comments threshold voltage vt n 0.6 0.8 1.0 v 100x4 m body factor g n 0.6 v 1/2 100x4 m conduction factor b n 42 47 52 a/v 2 100x100 m effective channel length leff n 2.85 3.2 3.55 m 100x4 m width encroachment d w n 0.7 m per side punch through voltage bvdss n 12 v poly field threshold voltage vtf p(n) 12 v p-channel transistor symbol minimum typical maximum unit comments threshold voltage vt p ?.6 ?.8 ?.0 v 100x4 m body factor g p 0.55 v 1/2 100x4 m conduction factor b p 13 15 19 a/v 2 100x100 m effective channel length leff p 2.85 3.2 3.55 m 100x4 m width encroachment d w p 0.9 m per side punch through voltage bvdss p ?2 v poly field threshold voltage vtf p(p) ?2 v diffusion & thin films symbol minimum typical maximum unit comments well (field) sheet resistance r p-well(f) 3.2 4.8 6.5 k / o p-well n+ sheet resistance r n+ 16 21 27 / o n+ junction depth x jn+ 0.8 m p+ sheet resistance r p+ 50 80 100 / o p+ junction depth x jp+ 0.7 m gate oxide thickness t gox 44 48 52 nm interpoly oxide thickness t p1p2 60 nm gate poly sheet resistance r poly1 15 22 30 / o bottom poly sheet res. r poly2 15 22 30 / o metal-1 sheet resistance r m1 30 60 m / o passivation thickness t pass 200+900 nm oxide+nit. capacitance symbol minimum typical maximum unit comments gate oxide c ox 0.66 0.72 0.78 ff/ m 2 metal-1 to poly-1 c m1p 0.0523 ff/ m 2 metal-1 to silicon c m1s 0.026 0.030 0.034 ff/ m 2 poly-1 to poly-2 c p1p2 0.51 0.57 0.63 ff/ m 2
86 C3013-4-98 process C3013 physical characteristics starting material n <100> n+/p+ width/space 3.0 / 3.0 m starting mat. resistivity 15 - 25 -cm n+ to p+ space 12 m typ. operating voltage 5v contact to poly space 2.5 m well type p-well contact overlap of diffusion 1.5 m metal layers 1 contact overlap of poly 1.0 m poly layers 2 metal-1 overlap of contact 1.0 m contact size 2.0x2.0 m minimum pad opening 100x100 m metal-1 width/space 3.5 / 2.5 m minimum pad-to-pad spacing 55 m gate poly width/space 4.0 / 2.5 m minimum pad pitch 80.0 m special feature of C3013 process: p-well analog process with single metal cmos 3.0 m technology for 10 volt applications. |
Price & Availability of C3013
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |